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PD- 94086
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF5802
HEXFET(R) Power MOSFET RDS(on) max 1.2@VGS = 10V ID
0.9A
VDSS
150V
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
D
1
6
D
D
2
5
D
G
3
4
S
TSOP-6
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
0.9 0.7 7.0 2.0 0.02 30 7.1 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
62.5
Units
C/W
Notes through are on page 8
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IRF5802
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.19 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 1.2 VGS = 10V, ID = 0.54A 5.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units Conditions 0.55 --- --- S VDS = 50V, ID = 0.54A --- 4.5 6.8 ID = 0.54A --- 1.0 1.5 nC VDS = 120V --- 2.4 3.6 VGS = 10V, --- 6.0 --- VDD = 75V --- 1.6 --- ID = 0.54A ns --- 7.5 --- RG = 6.0 --- 9.2 --- VGS = 10V --- 88 --- VGS = 0V --- 26 --- VDS = 25V --- 7.7 --- pF = 1.0MHz --- 110 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- 14 --- VGS = 0V, VDS = 120V, = 1.0MHz --- 3.0 --- VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
9.5 0.9
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 46 55 1.8 A 18 1.3 69 83 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 0.54A, VGS = 0V TJ = 25C, IF = 0.54A di/dt = 100A/s
D
S
2
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IRF5802
100
VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP
10
I D , Drain-to-Source Current (A)
10
1
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP
1
6.0V
0.1
6.0V
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 25 C
ID = 0.9A
I D , Drain-to-Source Current (A)
TJ = 150 C
2.0
1.5
1
1.0
0.5
0.1 6 8 10
V DS = 50V 20s PULSE WIDTH 12 14
VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5802
1000 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 0.54A VDS = 120V VDS = 75V VDS = 30V
VGS , Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
100
Ciss Coss Crss
12
8
10
4
1 1 10 100 1000
0 0 1 2 3 4 5 6
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100 OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
TJ = 150 C
10
1
1 100sec 1msec 0.1 T A = 25C T J = 150C Single Pulse 10msec
TJ = 25 C
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
0.01 1 10 100 1000 VDS , Drain-toSource Voltage (V)
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5802
1.0
VDS
0.8
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
-VDD
0.6
10V
0.4
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
0.2
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE)
PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5802
R DS ( on) , Drain-to-Source On Resistance ( )
R DS(on) , Drain-to -Source On Resistance ( )
2.80
6.00
2.40
4.00
2.00
1.60
ID = 0.54A
2.00
VGS = 10V
1.20
0.80 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
0.00 0 2 4 6
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Current Regulator Same Type as D.U.T.
Fig 13. Typical On-Resistance Vs. Drain Current
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
25
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
Charge
IG ID
20
ID 0.40A 0.70A BOTTOM 0.90A TOP
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
15
10
15 V
5
V (B R )D S S tp VD S L DRIVE R
0 25 50 75 100 125 150
RG 20V IAS tp
D .U .T IA S 0.01
+ V - DD
A
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF5802
TSOP-6 Package Outline
TSOP-6 Part Marking Information
EXAMPLE: T HIS IS AN SI3443DV WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DATE CODE
3A YW
T OP WAFER LOT NUMBER CODE
XXXX
BOT TOM
2001 2002 2003 2004 2005 1996 1997 1998 1999 2000
24 25 26
X Y Z
PART NUMBER CODE REFERENCE: 3A = SI3443DV 3B = IRF5800 3C = IRF5850 3D = IRF5851 3E = IRF5852 3I = IRF5805 3J = IRF5806 DAT E CODE EXAMPLES : YWW = 9603 = 6C YWW = 9632 = FF
WW = (27-52) IF PRECEDED BY A LET T ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51
X Y
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IRF5802
TSOP-6 Tape & Reel Information
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 23mH
RG = 25, IAS = 0.54A.
Pulse width 400s; duty cycle 2%.
ISD 0.54A, di/dt 89A/s, VDD V(BR)DSS,
TJ 150C
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/00
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